黄伟其
发布时间: 2017-10-26 浏览次数: 427

教师简介

黄伟其,贵州大学物理学院,纳米光子物理研究所,教授,硕士生导师。

曾主持和参加“量子场波函数相因子的研究”、“分形与图像处理的研究”、“半导体材料光电吸收的非线性效应的研究”“硅锗异质结的特性研究”、“MPS纳米结构的加工和特性研究”、“锗的纳米结构分布与PL光谱”、“锗的低维纳米结构分布与量子受限模型”和“硅锗合金的氧化层的生成和纳米结构特性研究”等课题。2001年至2002年,到丹麦王国奥胡斯大学物理系IFA半导体纳米材料研究所任客座教授;2003年,到丹麦王国哥本哈根大学玻尔近代物理研究所作高访教授,深受著名凝聚态物理学家安德森的影响。2000年以来,曾主持和参加并完成了3项省部级课题;2005年以来,曾主持和参加并完成了2项国家自然科学基金课题;以第1主持人获省科学进步奖二等奖和三等奖各一项。近来,在《Natures》子刊、Appl.Phys.Lett、Optics Letters、Nanoscale Research Letter、J.Appl.Phys、Opt.Com.和Appl.Surf.Sci.等国际重要物理期刊上以第一作者发表相关学术论文:“Magic electron affection in preparation process of silicon nanocrystal”、“Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer”、“Stimulated emission from trap electronic states in oxide of nanocrystal Si”、“Low-dimensional structures formed by irradiation of laser”、“An all-silicon laser by coupling between electronic localized states and defect states of photonic crystal”和“Nano-laser on silicon quantum dots”等100余篇,其中六十多篇被(SCI)和(EI)收录,其中有一百多次他引。出版学术著作三部。

 


联系方式:贵州大学物理学院,邮编 550025   Email:  wqhuang@gzu.edu.cn

 


主要经历

 

2003/09-至今:贵州大学理学院物理系教授,纳米光子物理研究所所长,凝聚态物理与光学 硕士点导师。

2001/08-2003/09:丹麦王国哥本哈根大学波尔近代物理研究所高级访问学者和Arhus大学客座教授,聘请人:丹麦王国Arhus大学物理系主任A.N.Larsen教授,合作人:波尔近代物理研究所所长P. Alstrom教授。

1986/02-2003/09: 贵州师范学院物理系任教,讲师,副教授,教授。

2003/09-至今:   贵州大学理学院物理系教授,凝聚态物理与光学硕士点导师。

 贵州大学纳米光子物理研究所,所长,教授。

2009/07-2016/12:与复旦大学物理系合作开展硅锗量子点发光方面的研究工作,教授。

2011-至今:与英国Lancaster大学物理系合作开展硅纳米线发光方面的研究工作,教授。

2011/07:与英国Sheffield大学物理系合作开展量子点调控方面的研究工作,教授。

 

 

 

 


所获荣誉

 

以第一主持人获贵州省科技进步二等奖(2009年)和三等奖(2015年)各一项

国际重要学术期刊英国《自然》杂志子刊和美国Optic.Lett.等刊的审稿人

 


科研成果

 

发表学术论文100余篇,其中被SCI和EI收录的学术论文六十多篇,申请专利十多项(获三项发明专利授权和六项实用新型专利授权),  出版学术著作三部。以第一主持人获贵州省科技进步二等奖和三等奖各一项。近来取得的代表性相关学术成果有:

I. 专利:
代表性的相关发明专利有:
1.全硅量子点纳米激光器及其制备方法,黄伟其,专利证书号:1075471

2.多层全硅发光材料及其制备方法,黄伟其, 专利证书号:2687724

代表性的相关实用新型专利有:
1.  利用可控脉冲激光加工纳米结构的装置,黄伟其,专利证书号:2633489

2. 发光材料的发光性质复合检测装置,黄伟其,专利证书号:2687724

3.  利用反射泰伯效应成像的微结构放大装置,黄伟其,专利证书号:3009086

II.  获奖:
以第一主持人获贵州省科技进步二等奖(2009年)和三等奖(2015年)各一项

III.  近来相关代表性论文(被SCI和EI收录)有:
W.Q.Huang, S.R.Liu and Z.M.Huang. Magic electron affection in preparation process of silicon nanocrystal,

Nature Scientific Reports, Vol.4,9932 DOI:10.1038/srep09932.2015

W.Q.Huang, S.R.Liu and Z.M.Huang.Silicon nanocrystal growth under irradiation of electron beam,Nature

Scientific Reports,Vol.5, 16682 DOI:10.1038/srep16682.2015

Wei-Qi Huang, Shi-Rong Liuand Qian-Dong Zhuang, Lasing with Pumping Levels of Si Nanocrystals on

Silicon Wafer [J]. Nanoscale Research Letters, 11:500 IF:2.58, 2016

Wei-Qi Huang,Zhong-Mei Huang, Shi-Rong Liu, Electronic states of defect with impurityand infrared

emission on black Siliconprepared by an ns-laser, Optics Letters, Vol. 42, No. 2, 2017

Zhong-Mei Huang, Wei-Qi Huang*, Tai-Ge Dong, Gang Wang, Xue-Ke Wu, Enhanced emission of quantum

system in Si-Ge nanolayers structure, Nanoscale Research Letters 11:462, (SCI)IF:2.58,2016

Wei-Qi Huang, Shi-RongLiu, Ti-GerDong, Annealing and quenching effect in the localized states emission on

nanosilicon fabricated by pulsed laser,Optics Communications 342, 79–82, 2015

Zhong-Mei Huang, Wei-Qi Huang*, Shi-Rong Liu, Emission of direct-gap band in germanium with Ge-GeSn

layers on one-dimensional structure [J]. Scientific Reports | 6:24802, IF:5.228,2016
Zhong-Mei Huang, Wei-Qi Huang*, Tai-Ge Dong, Gang Wang, Xue-Ke Wu, Enhanced emission of quantum

system in Si-Ge nanolayers structure, Nanoscale Research Letters 11:462, (SCI)IF:2.58, 2016

Wei-Qi Huang, Zhong-Mei Huang, Xin-Jiang Miao, Chao-Jian Qin,Quan Lv,Manipulation of electronic states

and photonic states in nanosilicon, Optics Communications. 317, 40, 2014

Wei-Qi Huang, Shirong Liu, Zhong-Mei Huang, Xin-Jian Miao, Chao-Jian Qin, Quan Lv,Nanobulges on

surface of silicon film and Si–Yb quantum cascade laser,Optics Communications 323, 178–182, 2014

Wei-Qi Huang, Zhong-Mei Huang, Shi-Rong Liu, and Chao-Jian Qin,Electronic states and curved surface effect of silicon quantum dots. Appl.phys.Lett. 101, 171601, 2012

12. Wei-Qi Huang, Zhong-Mei Huang, Shi-Rong Liu, Chao-Jian Qin, An all-silicon laser by coupling between electronic localized states and defect states of photonic crystal, Applied Surface Science, 258, 3033, 2012

13. Wei-Qi Huang, Shi-Rong Liu, Selecting of modes in nano-laser of silicon quantum dots, Optics Communications.  285, 3217, 2012

14. Wei-Qi Huang,Shi-Rong Liu,Cao-Jian Qin.Stimulated emission from trap electronic states in oxide of nanocrystal Si. Appl.phys.Lett. 92, 221910, 2008

15. Wei-Qi Huang, Shi-Rong Liu, Feng Jin, Hai-Xu Wang. Response to “Comment on ‘Stimulated emission from trap electronic states in oxide of nanocrystal Si’ ”. Appl.phys.Lett. 93, 066102, 2008

16.Zhong-Mei Huang, Wei-Qi Huang, Xin-Jian Miao, CS effect and characteristic emission on silicon

nanostructures prepared in various atmospheres, Optics Communications, 309(07), pp 127-133,/7/8,2013

17. Wei-Qi Huang, Shi-Rong Liu, Rong-Tao Zhang, Hai-Xu Wang, Feng Jin, Li Xu, Shui-Jie Qin, Ke-Yue Wu, Cao-Jian Qin,Nano-laser on silicon quantum dots,Optics Communications. 284, 1992, 2011

18. Wei-Qi Huang, Shi-Rong Liu, Cao-Jian Qin. Laser on porous silicon after oxidation by irradiation and annealing. Optics Communications. 281, 5229, 2008

19. Wei-Qi Huang, Shi-Rong Liu. Enhancement of photoluminescence emission in low-dimensiona structures formed by irradiation of laser. J.Appl.Phys. 102, 053517, 2007

20. Weiqi Huang, Liu Jia-Xing, Cai Cheng-Lan,Lv Quan, Liu Shi-Rong, and Qin Chao-Jian,Role of nitrogen and

oxygen in emission of Si quantum dots formed by pulse laser. Chin. Phys. B. Vol. 19, 2010
21.Huang Wei-Qi, Liu Shi-Rong,Qin Chao-Jian, Qin Shui-Jie. Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser. Chinese Physics B. Vol.17, 1674 (2008)

22. Huang Wei-Qi, Wang Hai-Xu, Jin Feng, Wu Ke-Yue, Liu Shi-Rong,Qin Chao-Jian, Qin hui-Jie. Trap states in Oxidation Layer of nanocrystal Si. Chinese Physics B. Vol.17, 1674 (2008)

23. Huang Wei-Qi, Liu Shi-Rong, Xu Li, Wu Ke-Yue, Qin Cao-Jian, Cai Sao-Hong. Low-dimensional structures formed by irradiation of laser. Chin.Phys B. Vol.16, 725 (2007)

24. Huang Wei-Qi, Lue Quan, Zhang Rong-Tao, Wang Xiao-Yun, Yu Shi-Qiang,Localized electronic states in gaps on hole-net structures of silicon, Chin.Phys B. Vol.18, 5066 (2009)

25. Huang Wei-Qi, Wang Xiao-Yun, Zhang Rong-Tao, Yu Shi-Qiang, Qin Chao-Jian, Localized electron state on porous silicon quantum dots, ACTA PHYSICA SINICA, 58 (7): 4652 (2009)

26. Huang Wei-Qi, Lue Quan, Xu Li, Zhang, Zhang Rong-Tao, Wang Hai-Xu, Jin Feng, Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser, Chin.Phys.Lett., 26 (2): 026803 (2009)

27. Huang Weiqi, Zhang Rongtao, Qin Chaojian, Liu Shirong, Jin Feng, Wang Haixu, Xu Li, Wu Keyue, Chen Liang, Stimulated emission in porous silicon quantum dots: The role of trap states, High Power Laser and Particle Beams, V21, 1161(2009)

28. Weiqi Huang, Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser. Chin. Phys. B Vol.19 (2010)

29. Huang Wei-Qi, Yin Jun, Zhou Nian-Jie, Huang Zhong-Mei, Miao Xin-Jian, Cheng Han-Qiong, Su Qin, Liu Shi-Rong, and Qin Chao-Jian, Curved surface effect and emission on silicon nanostructures, Chin. Phys. B Vol.22, 104204 (2013)

30. Huang Wei-Qi, Miao Xin-Jian, Huang Zhong-Mei, Cheng Han-Qiong, and Su Qin, Electronic states and shapes of silicon quantum dots, Chin. Phys. B Vol.22, 064207 (2013)